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Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films.

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Title: Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films.
Authors: Bai, Yunhe1 (AUTHOR), Li, Yuanzhao1 (AUTHOR), Luan, Jianli1 (AUTHOR), Liu, Ruixuan1 (AUTHOR), Song, Wenyu1 (AUTHOR), Chen, Yang1 (AUTHOR), Ji, Peng-Fei1 (AUTHOR), Zhang, Qinghua2 (AUTHOR), Meng, Fanqi3 (AUTHOR), Tong, Bingbing4 (AUTHOR), Li, Lin4 (AUTHOR), Jiang, Yuying1 (AUTHOR), Gao, Zongwei4 (AUTHOR), Gu, Lin3 (AUTHOR), Zhang, Jinsong1,5,6 (AUTHOR), Wang, Yayu1,5,6 (AUTHOR), Xue, Qi-Kun1,4,5,7 (AUTHOR), He, Ke1,4,5,6 (AUTHOR) kehe@tsinghua.edu.cn, Feng, Yang4 (AUTHOR) fengyang@baqis.ac.cn, Feng, Xiao1,4,5,6 (AUTHOR) xiaofeng@mail.tsinghua.edu.cn
Source: National Science Review. Feb2024, Vol. 11 Issue 2, p1-9. 9p.
Database: Academic Search Ultimate
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  Data: Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films.
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  Data: <searchLink fieldCode="JN" term="%22National+Science+Review%22">National Science Review</searchLink>. Feb2024, Vol. 11 Issue 2, p1-9. 9p.
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              Text: Feb2024
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