Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials.
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| Title: | Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials. |
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| Authors: | Zhou, Hangbo1 (AUTHOR), Li, Sifan2 (AUTHOR), Ang, Kah-Wee2,3 (AUTHOR) eleakw@nus.edu.sg, Zhang, Yong-Wei1 (AUTHOR) zhangyw@ihpc.a-star.edu.sg |
| Source: | Nano-Micro Letters. 2/19/2024, Vol. 16 Issue 1, p1-30. 30p. |
| Database: | Academic Search Ultimate |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: asn DbLabel: Academic Search Ultimate An: 176583415 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s40820-024-01335-2 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 30 StartPage: 1 Titles: – TitleFull: Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Zhou, Hangbo – PersonEntity: Name: NameFull: Li, Sifan – PersonEntity: Name: NameFull: Ang, Kah-Wee – PersonEntity: Name: NameFull: Zhang, Yong-Wei IsPartOfRelationships: – BibEntity: Dates: – D: 19 M: 02 Text: 2/19/2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 23116706 Numbering: – Type: volume Value: 16 – Type: issue Value: 1 Titles: – TitleFull: Nano-Micro Letters Type: main |
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