APA (7th ed.) Citation

Lee, T., Park, S., Choi, J., Chung, S., Kim, M., Lee, G., . . . Koo, S. (2024). Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD. Applied Physics A: Materials Science & Processing, 130(10), 1. https://doi.org/10.1007/s00339-024-07835-7

Chicago Style (17th ed.) Citation

Lee, Tae-Hee, et al. "Analysis of Deep Level Defects in Nitrogen Post-deposition Annealed Ga2O3/SiC Hetero-structured Schottky Diodes Grown by Mist-CVD." Applied Physics A: Materials Science & Processing 130, no. 10 (2024): 1. https://doi.org/10.1007/s00339-024-07835-7.

MLA (9th ed.) Citation

Lee, Tae-Hee, et al. "Analysis of Deep Level Defects in Nitrogen Post-deposition Annealed Ga2O3/SiC Hetero-structured Schottky Diodes Grown by Mist-CVD." Applied Physics A: Materials Science & Processing, vol. 130, no. 10, 2024, p. 1, https://doi.org/10.1007/s00339-024-07835-7.