View in EDS HTML Full Text PDF Full Text

Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD.

Saved in:
Bibliographic Details
Title: Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD.
Authors: Lee, Tae-Hee1 (AUTHOR), Park, Se-Rim1 (AUTHOR), Choi, Ji-Soo1 (AUTHOR), Chung, Seung-Hwan1 (AUTHOR), Kim, Min-Yeong1 (AUTHOR), Lee, Geon-Hee1 (AUTHOR), Cho, Seong-Ho2 (AUTHOR), Bae, Si-Young2 (AUTHOR), Kim, Il Ryong3 (AUTHOR), Kim, Min Kyu3 (AUTHOR), Lim, Byeong Cheol3 (AUTHOR), Schweitz, Michael A.1 (AUTHOR), Koo, Sang-Mo1 (AUTHOR) smkoo@kw.ac.kr
Source: Applied Physics A: Materials Science & Processing. Oct2024, Vol. 130 Issue 10, p1-7. 7p.
Database: Academic Search Ultimate
Full text is not displayed to guests.
Description
ISSN:09478396
DOI:10.1007/s00339-024-07835-7