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Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD.

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Title: Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD.
Authors: Lee, Tae-Hee1 (AUTHOR), Park, Se-Rim1 (AUTHOR), Choi, Ji-Soo1 (AUTHOR), Chung, Seung-Hwan1 (AUTHOR), Kim, Min-Yeong1 (AUTHOR), Lee, Geon-Hee1 (AUTHOR), Cho, Seong-Ho2 (AUTHOR), Bae, Si-Young2 (AUTHOR), Kim, Il Ryong3 (AUTHOR), Kim, Min Kyu3 (AUTHOR), Lim, Byeong Cheol3 (AUTHOR), Schweitz, Michael A.1 (AUTHOR), Koo, Sang-Mo1 (AUTHOR) smkoo@kw.ac.kr
Source: Applied Physics A: Materials Science & Processing. Oct2024, Vol. 130 Issue 10, p1-7. 7p.
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  Data: Analysis of deep level defects in nitrogen post-deposition annealed Ga<subscript>2</subscript>O<subscript>3</subscript>/SiC hetero-structured Schottky diodes grown by mist-CVD.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. Oct2024, Vol. 130 Issue 10, p1-7. 7p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=180370170
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        Value: 10.1007/s00339-024-07835-7
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        Text: English
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      – TitleFull: Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD.
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              Text: Oct2024
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