Malindretos, J., Jaeckel, H., Hilbrunner, C., & Rizzi, A. (2024). Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions. Physica Status Solidi (B), 261(11), 1. https://doi.org/10.1002/pssb.202400015
Chicago Style (17th ed.) CitationMalindretos, Joerg, Hendrik Jaeckel, Constantin Hilbrunner, and Angela Rizzi. "Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures Under In‐Bilayer Stabilized Conditions." Physica Status Solidi (B) 261, no. 11 (2024): 1. https://doi.org/10.1002/pssb.202400015.
MLA (9th ed.) CitationMalindretos, Joerg, et al. "Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures Under In‐Bilayer Stabilized Conditions." Physica Status Solidi (B), vol. 261, no. 11, 2024, p. 1, https://doi.org/10.1002/pssb.202400015.