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Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions.

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Bibliographic Details
Title: Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions.
Authors: Malindretos, Joerg1 (AUTHOR) joerg.malindretos@uni-goettingen.de, Jaeckel, Hendrik1 (AUTHOR), Hilbrunner, Constantin1 (AUTHOR), Rizzi, Angela1 (AUTHOR) angela.rizzi@uni-goettingen.de
Source: Physica Status Solidi (B). Nov2024, Vol. 261 Issue 11, p1-6. 6p.
Database: Academic Search Ultimate
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