A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits.
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| Title: | A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits. |
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| Authors: | Fu, Yanjun1 (AUTHOR) fuyanjun@nint.ac.cn, Peng, Zhigang2 (AUTHOR) pengzg@stu.xjtu.edu.cn, Dong, Zhiyong2 (AUTHOR) dongzhiyong@stu.xjtu.edu.cn, Li, Pei2 (AUTHOR) lipei0916@xjtu.edu.cn, Wei, Yuan1 (AUTHOR) lipei0916@xjtu.edu.cn, Zhang, Dongya1 (AUTHOR) zuoyinghong@nint.ac.cn, Zuo, Yinghong1 (AUTHOR) zhujinhui@nint.ac.cn, Zhu, Jinhui1 (AUTHOR) niushengli21@sohu.com, Niu, Shengli1 (AUTHOR) |
| Source: | Sensors (14248220). Dec2024, Vol. 24 Issue 23, p7659. 13p. |
| Database: | Academic Search Ultimate |
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| ISSN: | 14248220 |
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| DOI: | 10.3390/s24237659 |
