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High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels.

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Bibliographic Details
Title: High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels.
Authors: Liao, Wei1 (AUTHOR), Qian, Wentao1 (AUTHOR), An, Junyang1 (AUTHOR), Liang, Lei1 (AUTHOR), Hu, Zhiyan1 (AUTHOR), Wang, Junzhuan1 (AUTHOR), Yu, Linwei1 (AUTHOR) yulinwei@nju.edu.cn
Source: Nano-Micro Letters. 2/19/2025, Vol. 17 Issue 1, p1-11. 11p.
Database: Academic Search Ultimate
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Description
ISSN:23116706
DOI:10.1007/s40820-025-01674-8