APA (7th ed.) Citation

Kim, S., Kim, H., Kwon, K., & Kwon, D. (2025). Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors. Advanced Science, 12(18), 1. https://doi.org/10.1002/advs.202413090

Chicago Style (17th ed.) Citation

Kim, Sihyun, Hyun‐Min Kim, Ki‐Ryun Kwon, and Daewoong Kwon. "Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors." Advanced Science 12, no. 18 (2025): 1. https://doi.org/10.1002/advs.202413090.

MLA (9th ed.) Citation

Kim, Sihyun, et al. "Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors." Advanced Science, vol. 12, no. 18, 2025, p. 1, https://doi.org/10.1002/advs.202413090.