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Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors.

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Bibliographic Details
Title: Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors.
Authors: Kim, Sihyun1 (AUTHOR) skim@sogang.ac.kr, Kim, Hyun‐Min2 (AUTHOR), Kwon, Ki‐Ryun2 (AUTHOR), Kwon, Daewoong2 (AUTHOR) dw79kwon@hanyang.ac.kr
Source: Advanced Science. 5/15/2025, Vol. 12 Issue 18, p1-9. 9p.
Database: Academic Search Ultimate
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Description
ISSN:21983844
DOI:10.1002/advs.202413090