Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors.

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Title: Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors.
Authors: Kim, Sihyun1 (AUTHOR) skim@sogang.ac.kr, Kim, Hyun‐Min2 (AUTHOR), Kwon, Ki‐Ryun2 (AUTHOR), Kwon, Daewoong2 (AUTHOR) dw79kwon@hanyang.ac.kr
Source: Advanced Science. 5/15/2025, Vol. 12 Issue 18, p1-9. 9p.
Database: Academic Search Ultimate
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  Data: Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors.
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  Data: <searchLink fieldCode="AR" term="%22Kim%2C+Sihyun%22">Kim, Sihyun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> skim@sogang.ac.kr</i><br /><searchLink fieldCode="AR" term="%22Kim%2C+Hyun‐Min%22">Kim, Hyun‐Min</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kwon%2C+Ki‐Ryun%22">Kwon, Ki‐Ryun</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kwon%2C+Daewoong%22">Kwon, Daewoong</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> dw79kwon@hanyang.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Science%22">Advanced Science</searchLink>. 5/15/2025, Vol. 12 Issue 18, p1-9. 9p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=185185495
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1002/advs.202413090
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      – Code: eng
        Text: English
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        PageCount: 9
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      – TitleFull: Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors.
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            NameFull: Kim, Sihyun
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            NameFull: Kim, Hyun‐Min
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            NameFull: Kwon, Ki‐Ryun
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              Text: 5/15/2025
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              Y: 2025
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