APA (7th ed.) Citation

Patil, M., Sheikh, A. H., Khalid, N., Chilwirwar, A. P., Parvez, B., Ganguly, S., & Saha, D. (2025). A GaN-based multi-threshold two-finger high electron mobility transistor with reduced third-order nonlinearity by nullification. APL Electronic Devices, 1(2), 1. https://doi.org/10.1063/5.0265870

Chicago Style (17th ed.) Citation

Patil, Mahalaxmi, Aaqib H. Sheikh, Nashra Khalid, Anurag P. Chilwirwar, B. Parvez, S. Ganguly, and D. Saha. "A GaN-based Multi-threshold Two-finger High Electron Mobility Transistor with Reduced Third-order Nonlinearity by Nullification." APL Electronic Devices 1, no. 2 (2025): 1. https://doi.org/10.1063/5.0265870.

MLA (9th ed.) Citation

Patil, Mahalaxmi, et al. "A GaN-based Multi-threshold Two-finger High Electron Mobility Transistor with Reduced Third-order Nonlinearity by Nullification." APL Electronic Devices, vol. 1, no. 2, 2025, p. 1, https://doi.org/10.1063/5.0265870.