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A GaN-based multi-threshold two-finger high electron mobility transistor with reduced third-order nonlinearity by nullification.

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Title: A GaN-based multi-threshold two-finger high electron mobility transistor with reduced third-order nonlinearity by nullification.
Authors: Patil, Mahalaxmi1 (AUTHOR), Sheikh, Aaqib H.1 (AUTHOR), Khalid, Nashra1 (AUTHOR), Chilwirwar, Anurag P.1 (AUTHOR), Parvez, B.1 (AUTHOR), Ganguly, S.1 (AUTHOR), Saha, D.1 (AUTHOR) dipankarsaha@iitb.ac.in
Source: APL Electronic Devices. Jun2025, Vol. 1 Issue 2, p1-7. 7p.
Database: Academic Search Ultimate
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ISSN:29958423
DOI:10.1063/5.0265870