APA (7th ed.) Citation

Sun, J., Bae, J., Lim, T., Jeong, M., Nahar, S., Kim, Y., & Jang, J. (2025). High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device. Physica Status Solidi. A: Applications & Materials Science, 222(11), 1. https://doi.org/10.1002/pssa.202400857

Chicago Style (17th ed.) Citation

Sun, Jiwon, Jinbaek Bae, Taebin Lim, Myeonggi Jeong, Sabiqun Nahar, Yuna Kim, and Jin Jang. "High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device." Physica Status Solidi. A: Applications & Materials Science 222, no. 11 (2025): 1. https://doi.org/10.1002/pssa.202400857.

MLA (9th ed.) Citation

Sun, Jiwon, et al. "High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device." Physica Status Solidi. A: Applications & Materials Science, vol. 222, no. 11, 2025, p. 1, https://doi.org/10.1002/pssa.202400857.