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High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device.

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Bibliographic Details
Title: High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device.
Authors: Sun, Jiwon1 (AUTHOR), Bae, Jinbaek1 (AUTHOR), Lim, Taebin1 (AUTHOR), Jeong, Myeonggi1 (AUTHOR), Nahar, Sabiqun1 (AUTHOR), Kim, Yuna1 (AUTHOR), Jang, Jin1 (AUTHOR) jjang@khu.ac.kr
Source: Physica Status Solidi. A: Applications & Materials Science. Jun2025, Vol. 222 Issue 11, p1-9. 9p.
Database: Academic Search Ultimate
Description
ISSN:18626300
DOI:10.1002/pssa.202400857