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High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device.

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Title: High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device.
Authors: Sun, Jiwon1 (AUTHOR), Bae, Jinbaek1 (AUTHOR), Lim, Taebin1 (AUTHOR), Jeong, Myeonggi1 (AUTHOR), Nahar, Sabiqun1 (AUTHOR), Kim, Yuna1 (AUTHOR), Jang, Jin1 (AUTHOR) jjang@khu.ac.kr
Source: Physica Status Solidi. A: Applications & Materials Science. Jun2025, Vol. 222 Issue 11, p1-9. 9p.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 186458166
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N<subscript>2</subscript>O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device.
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  Data: <searchLink fieldCode="AR" term="%22Sun%2C+Jiwon%22">Sun, Jiwon</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bae%2C+Jinbaek%22">Bae, Jinbaek</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lim%2C+Taebin%22">Lim, Taebin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jeong%2C+Myeonggi%22">Jeong, Myeonggi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Nahar%2C+Sabiqun%22">Nahar, Sabiqun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Yuna%22">Kim, Yuna</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jang%2C+Jin%22">Jang, Jin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jjang@khu.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Physica+Status+Solidi%2E+A%3A+Applications+%26+Materials+Science%22">Physica Status Solidi. A: Applications & Materials Science</searchLink>. Jun2025, Vol. 222 Issue 11, p1-9. 9p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=186458166
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1002/pssa.202400857
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 1
    Titles:
      – TitleFull: High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device.
        Type: main
  BibRelationships:
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      – PersonEntity:
          Name:
            NameFull: Sun, Jiwon
      – PersonEntity:
          Name:
            NameFull: Bae, Jinbaek
      – PersonEntity:
          Name:
            NameFull: Lim, Taebin
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            NameFull: Jeong, Myeonggi
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            NameFull: Nahar, Sabiqun
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            NameFull: Kim, Yuna
      – PersonEntity:
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            NameFull: Jang, Jin
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          Dates:
            – D: 01
              M: 06
              Text: Jun2025
              Type: published
              Y: 2025
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              Value: 18626300
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              Value: 222
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              Value: 11
          Titles:
            – TitleFull: Physica Status Solidi. A: Applications & Materials Science
              Type: main
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