High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device. - Sun, Jiwon; Bae, Jinbaek; Lim, Taebin; Jeong, Myeonggi; Nahar, Sabiqun; Kim, Yuna; Jang, Jin (Physica Status Solidi. A: Applications & Materials Science, 2025)