APA (7th ed.) Citation

Huang, Z., Zhang, Z., Wang, Y., Yang, X., Huang, S., Zhang, Y., . . . Su, S. (2025). High-performance type-I Sn-doped-Ga2O3/SnSe2 heterojunction photodetectors enabled by Fowler–Nordheim tunneling. Applied Physics Letters, 127(6), 1. https://doi.org/10.1063/5.0282601

Chicago Style (17th ed.) Citation

Huang, Zibin, et al. "High-performance Type-I Sn-doped-Ga2O3/SnSe2 Heterojunction Photodetectors Enabled by Fowler–Nordheim Tunneling." Applied Physics Letters 127, no. 6 (2025): 1. https://doi.org/10.1063/5.0282601.

MLA (9th ed.) Citation

Huang, Zibin, et al. "High-performance Type-I Sn-doped-Ga2O3/SnSe2 Heterojunction Photodetectors Enabled by Fowler–Nordheim Tunneling." Applied Physics Letters, vol. 127, no. 6, 2025, p. 1, https://doi.org/10.1063/5.0282601.