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Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors.

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Bibliographic Details
Title: Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors.
Authors: Zhao, Bei1,2, Zhang, Zucheng1, Xu, Junqing3, Guo, Dingli2, Gu, Tiancheng2, He, Guiming2, Lu, Ping1, He, Kun1, Li, Jia1, Chen, Zhao3, Ren, Quan2, Miao, Lin2, Lu, Junpeng2,4, Ni, Zhenhua2,4, Duan, Xiangfeng5, Duan, Xidong1 xidongduan@hnu.edu.cn
Source: Science. 6/12/2025, Vol. 388 Issue 6752, p1183-1188. 6p.
Database: Academic Search Ultimate
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Description
ISSN:00368075
DOI:10.1126/science.adp8444