High-performance bilayer IGZO thin-film transistors by sputtering heterojunction with differences in indium elemental content.
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| Title: | High-performance bilayer IGZO thin-film transistors by sputtering heterojunction with differences in indium elemental content. |
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| Authors: | Zhang, Longfei1 (AUTHOR), Zhang, Hanzhe2 (AUTHOR), Wang, Yuhang2 (AUTHOR), Su, Shichen2 (AUTHOR) shichensu@scnu.edu.cn, Wang, Xianghu3 (AUTHOR) wangxh@sdju.edu.cn, Shen, Dezhen4 (AUTHOR), Zhu, Hai1 (AUTHOR) zhuhai5@mail.sysu.edu.cn |
| Source: | Chinese Physics B. Oct2025, Vol. 34 Issue 10, p1-8. 8p. |
| Database: | Academic Search Ultimate |
| ISSN: | 16741056 |
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| DOI: | 10.1088/1674-1056/add67d |
