Okbi, F., Moussa, R., Bouzgarrou, S., Faid, F., & Lakel, S. (2025). Effect of Pressure on the Structural, Electronic, and Elastic Properties of Indium-Doped AlSb Compounds. Semiconductors, 59(10), 1085. https://doi.org/10.1134/S1063782625600408
Chicago Style (17th ed.) CitationOkbi, F., R. Moussa, S. Bouzgarrou, F. Faid, and S. Lakel. "Effect of Pressure on the Structural, Electronic, and Elastic Properties of Indium-Doped AlSb Compounds." Semiconductors 59, no. 10 (2025): 1085. https://doi.org/10.1134/S1063782625600408.
MLA (9th ed.) CitationOkbi, F., et al. "Effect of Pressure on the Structural, Electronic, and Elastic Properties of Indium-Doped AlSb Compounds." Semiconductors, vol. 59, no. 10, 2025, p. 1085, https://doi.org/10.1134/S1063782625600408.