APA (7th ed.) Citation

Liu, Y., Tao, J., Dou, X., Xu, K., Li, Y., Zhu, H., . . . Liu, W. (2025). Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory. Advanced Science, 12(42), 1. https://doi.org/10.1002/advs.202509384

Chicago Style (17th ed.) Citation

Liu, Yinchi, et al. "Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 Toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory." Advanced Science 12, no. 42 (2025): 1. https://doi.org/10.1002/advs.202509384.

MLA (9th ed.) Citation

Liu, Yinchi, et al. "Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 Toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory." Advanced Science, vol. 12, no. 42, 2025, p. 1, https://doi.org/10.1002/advs.202509384.