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Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory.

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Title: Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory.
Authors: Liu, Yinchi1,2 (AUTHOR), Tao, Jiajia3 (AUTHOR), Dou, Xiaoyu4 (AUTHOR), Xu, Kangli1,2 (AUTHOR), Li, Yuchun2 (AUTHOR), Zhu, Handong1,2 (AUTHOR), Lu, Hongliang2 (AUTHOR), Li, Yanxi2 (AUTHOR), Liu, Chi5 (AUTHOR), Chen, Jiezhi4 (AUTHOR), Chen, Lin1,2 (AUTHOR) linchen@fudan.edu.cn, Ding, Shijin2 (AUTHOR), Wu, Jixuan4 (AUTHOR) jixuanwu@sdu.edu.cn, Liu, Wenjun1,2,6 (AUTHOR) wjliu@fudan.edu.cn
Source: Advanced Science. 11/13/2025, Vol. 12 Issue 42, p1-9. 9p.
Database: Academic Search Ultimate
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  Data: Zirconium‐Rich Strategy in Ultrathin Hf<subscript>0.5</subscript>Zr<subscript>0.5</subscript>O<subscript>2</subscript> toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Science%22">Advanced Science</searchLink>. 11/13/2025, Vol. 12 Issue 42, p1-9. 9p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=189333224
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        Value: 10.1002/advs.202509384
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      – TitleFull: Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory.
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              Text: 11/13/2025
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