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Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy.

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Bibliographic Details
Title:	Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy.
Authors:	Lee, Tae-Hee¹, Choi, Ji-Soo¹, Park, Se-Rim¹, Chung, Seung-Hwan¹, Lee, Geon-Hee¹, Lim, Jae Hyeok², Bae, Si-Young³, Koo, Sang-Mo¹ smkoo@kw.ac.kr
Source:	Journal of Applied Physics. 12/5/2025, Vol. 138 Issue 21, p1-7. 7p.
Database:	Academic Search Ultimate

Description
ISSN:	00218979
DOI:	10.1063/5.0287493