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Study of the Metal‐Semiconductor‐Metal Schottky Diode Based on β‐Gallium Oxide Microribbons Using a Geometrically Asymmetric Electrode.

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Title: Study of the Metal‐Semiconductor‐Metal Schottky Diode Based on β‐Gallium Oxide Microribbons Using a Geometrically Asymmetric Electrode.
Authors: Wang, Wenqian1 (AUTHOR), Cheng, Yi1 (AUTHOR) chengyi@dlmu.edu.cn, Liu, Tianshuo1 (AUTHOR), Zhu, Fanghao2 (AUTHOR), Guan, Yi3 (AUTHOR), Liang, Xingjuan4 (AUTHOR), Che, Li1 (AUTHOR), Yu, Tao1 (AUTHOR)
Source: Physica Status Solidi - Rapid Research Letters. Dec2025, Vol. 19 Issue 12, p1-8. 8p.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
An: 190548609
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Study of the Metal‐Semiconductor‐Metal Schottky Diode Based on β‐Gallium Oxide Microribbons Using a Geometrically Asymmetric Electrode.
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  Data: <searchLink fieldCode="JN" term="%22Physica+Status+Solidi+-+Rapid+Research+Letters%22">Physica Status Solidi - Rapid Research Letters</searchLink>. Dec2025, Vol. 19 Issue 12, p1-8. 8p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=190548609
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        Value: 10.1002/pssr.202500177
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      – Code: eng
        Text: English
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        PageCount: 8
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      – TitleFull: Study of the Metal‐Semiconductor‐Metal Schottky Diode Based on β‐Gallium Oxide Microribbons Using a Geometrically Asymmetric Electrode.
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            NameFull: Wang, Wenqian
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            NameFull: Cheng, Yi
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            NameFull: Zhu, Fanghao
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            NameFull: Guan, Yi
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            NameFull: Liang, Xingjuan
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            NameFull: Che, Li
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            – D: 01
              M: 12
              Text: Dec2025
              Type: published
              Y: 2025
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              Value: 19
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              Value: 12
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            – TitleFull: Physica Status Solidi - Rapid Research Letters
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