Study of the Metal‐Semiconductor‐Metal Schottky Diode Based on β‐Gallium Oxide Microribbons Using a Geometrically Asymmetric Electrode.

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Bibliographic Details
Title: Study of the Metal‐Semiconductor‐Metal Schottky Diode Based on β‐Gallium Oxide Microribbons Using a Geometrically Asymmetric Electrode.
Authors: Wang, Wenqian1 (AUTHOR), Cheng, Yi1 (AUTHOR) chengyi@dlmu.edu.cn, Liu, Tianshuo1 (AUTHOR), Zhu, Fanghao2 (AUTHOR), Guan, Yi3 (AUTHOR), Liang, Xingjuan4 (AUTHOR), Che, Li1 (AUTHOR), Yu, Tao1 (AUTHOR)
Source: Physica Status Solidi - Rapid Research Letters. Dec2025, Vol. 19 Issue 12, p1-8. 8p.
Database: Academic Search Ultimate
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