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Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design.

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Title: Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design.
Authors: Saravanan, M.1 (AUTHOR) saranecedgl@gmail.com, Parthasarathy, Eswaran2 (AUTHOR), Rahi, Shiromani Balmukund3 (AUTHOR), Natarajan, Ramkumar4 (AUTHOR)
Source: Scientific Reports. 12/29/2025, Vol. 15 Issue 1, p1-15. 15p.
Database: Academic Search Ultimate
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  Data: Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design.
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  Data: <searchLink fieldCode="JN" term="%22Scientific+Reports%22">Scientific Reports</searchLink>. 12/29/2025, Vol. 15 Issue 1, p1-15. 15p.
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        Value: 10.1038/s41598-025-28448-x
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