Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design.
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| Title: | Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. |
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| Authors: | Saravanan, M.1 (AUTHOR) saranecedgl@gmail.com, Parthasarathy, Eswaran2 (AUTHOR), Rahi, Shiromani Balmukund3 (AUTHOR), Natarajan, Ramkumar4 (AUTHOR) |
| Source: | Scientific Reports. 12/29/2025, Vol. 15 Issue 1, p1-15. 15p. |
| Database: | Academic Search Ultimate |
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