APA (7th ed.) Citation

Morisot, F., Fellahi, Z., Arjmand, T., Sharma, S., Demes, T., Mouis, M., & Ternon, C. (2025). Key technological elements for efficient integration of ZnO nanonets into performant field-effect transistors. APL Electronic Devices, 1(4), 1. https://doi.org/10.1063/5.0286300

Chicago Style (17th ed.) Citation

Morisot, F., Z. Fellahi, T. Arjmand, S. Sharma, T. Demes, M. Mouis, and C. Ternon. "Key Technological Elements for Efficient Integration of ZnO Nanonets into Performant Field-effect Transistors." APL Electronic Devices 1, no. 4 (2025): 1. https://doi.org/10.1063/5.0286300.

MLA (9th ed.) Citation

Morisot, F., et al. "Key Technological Elements for Efficient Integration of ZnO Nanonets into Performant Field-effect Transistors." APL Electronic Devices, vol. 1, no. 4, 2025, p. 1, https://doi.org/10.1063/5.0286300.