Key technological elements for efficient integration of ZnO nanonets into performant field-effect transistors.

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Bibliographic Details
Title: Key technological elements for efficient integration of ZnO nanonets into performant field-effect transistors.
Authors: Morisot, F.1,2 (AUTHOR), Fellahi, Z.1 (AUTHOR), Arjmand, T.1,2,3 (AUTHOR), Sharma, S.1 (AUTHOR), Demes, T.1 (AUTHOR), Mouis, M.2 (AUTHOR), Ternon, C.1 (AUTHOR) celine.ternon@grenoble-inp.fr
Source: APL Electronic Devices. Dec2025, Vol. 1 Issue 4, p1-9. 9p.
Database: Academic Search Ultimate
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