Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration.

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Bibliographic Details
Title: Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration.
Authors: Lundh, James Spencer1 (AUTHOR) james.s.lundh.civ@us.navy.mil, Klein, Brianna A.2 (AUTHOR), Feygelson, Tatyana I.1 (AUTHOR), Pennachio, Daniel J.1 (AUTHOR), Allerman, Andrew A.2 (AUTHOR), Gonzalez, GlenAsia2 (AUTHOR), Rocco, Emma G.1 (AUTHOR), Masten, Hannah N.3 (AUTHOR), Foster, Geoffrey M.3 (AUTHOR), Gann, Katie R.4 (AUTHOR), Jacobs, Alan G.1 (AUTHOR), Armstrong, Andrew M.2 (AUTHOR), Scott, Ethan A.5 (AUTHOR), Hopkins, Patrick E.5 (AUTHOR), Tadjer, Marko J.1 (AUTHOR), Pate, Bradford B.1 (AUTHOR), Hobart, Karl D.1 (AUTHOR), Mastro, Michael A.1 (AUTHOR)
Source: APL Electronic Devices. Dec2025, Vol. 1 Issue 4, p1-8. 8p.
Database: Academic Search Ultimate
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ISSN:29958423
DOI:10.1063/5.0304018