APA (7th ed.) Citation

Jeyakumar, R. S., Ganguly, S., & Saha, D. (2025). Physics-based unified analytical model capturing the transport and trapping mechanisms of electrons and holes in GaN-based heterostructures under a high substrate bias. APL Electronic Devices, 1(4), 1. https://doi.org/10.1063/5.0300125

Chicago Style (17th ed.) Citation

Jeyakumar, Ranie S., Swaroop Ganguly, and Dipankar Saha. "Physics-based Unified Analytical Model Capturing the Transport and Trapping Mechanisms of Electrons and Holes in GaN-based Heterostructures Under a High Substrate Bias." APL Electronic Devices 1, no. 4 (2025): 1. https://doi.org/10.1063/5.0300125.

MLA (9th ed.) Citation

Jeyakumar, Ranie S., et al. "Physics-based Unified Analytical Model Capturing the Transport and Trapping Mechanisms of Electrons and Holes in GaN-based Heterostructures Under a High Substrate Bias." APL Electronic Devices, vol. 1, no. 4, 2025, p. 1, https://doi.org/10.1063/5.0300125.