Physics-based unified analytical model capturing the transport and trapping mechanisms of electrons and holes in GaN-based heterostructures under a high substrate bias.
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| Title: | Physics-based unified analytical model capturing the transport and trapping mechanisms of electrons and holes in GaN-based heterostructures under a high substrate bias. |
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| Authors: | Jeyakumar, Ranie S.1 (AUTHOR), Ganguly, Swaroop1 (AUTHOR), Saha, Dipankar1 (AUTHOR) dipankarsaha@iitb.ac.in |
| Source: | APL Electronic Devices. Dec2025, Vol. 1 Issue 4, p1-11. 11p. |
| Database: | Academic Search Ultimate |
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| ISSN: | 29958423 |
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| DOI: | 10.1063/5.0300125 |
