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Physics-based unified analytical model capturing the transport and trapping mechanisms of electrons and holes in GaN-based heterostructures under a high substrate bias.

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Title: Physics-based unified analytical model capturing the transport and trapping mechanisms of electrons and holes in GaN-based heterostructures under a high substrate bias.
Authors: Jeyakumar, Ranie S.1 (AUTHOR), Ganguly, Swaroop1 (AUTHOR), Saha, Dipankar1 (AUTHOR) dipankarsaha@iitb.ac.in
Source: APL Electronic Devices. Dec2025, Vol. 1 Issue 4, p1-11. 11p.
Database: Academic Search Ultimate
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An: 190606913
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  Data: Physics-based unified analytical model capturing the transport and trapping mechanisms of electrons and holes in GaN-based heterostructures under a high substrate bias.
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  Data: <searchLink fieldCode="AR" term="%22Jeyakumar%2C+Ranie+S%2E%22">Jeyakumar, Ranie S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ganguly%2C+Swaroop%22">Ganguly, Swaroop</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Saha%2C+Dipankar%22">Saha, Dipankar</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> dipankarsaha@iitb.ac.in</i>
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  Data: <searchLink fieldCode="JN" term="%22APL+Electronic+Devices%22">APL Electronic Devices</searchLink>. Dec2025, Vol. 1 Issue 4, p1-11. 11p.
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/5.0300125
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      – Code: eng
        Text: English
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        PageCount: 11
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      – TitleFull: Physics-based unified analytical model capturing the transport and trapping mechanisms of electrons and holes in GaN-based heterostructures under a high substrate bias.
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            NameFull: Ganguly, Swaroop
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              Text: Dec2025
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