APA (7th ed.) Citation

Radtke, C., Enriquez, H., Arnault, J. C., Soukiassian, P., Moras, P., Crotti, C., & Perfetti, P. (2005). Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation. Applied Physics Letters, 87(19), 193110. https://doi.org/10.1063/1.2130714

Chicago Style (17th ed.) Citation

Radtke, C., H. Enriquez, J. C. Arnault, P. Soukiassian, P. Moras, C. Crotti, and P. Perfetti. "Initial Nitride Formation at Si/3C–SiC(100)3×2 Interface by Oxynitridation." Applied Physics Letters 87, no. 19 (2005): 193110. https://doi.org/10.1063/1.2130714.

MLA (9th ed.) Citation

Radtke, C., et al. "Initial Nitride Formation at Si/3C–SiC(100)3×2 Interface by Oxynitridation." Applied Physics Letters, vol. 87, no. 19, 2005, p. 193110, https://doi.org/10.1063/1.2130714.