Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation.
Saved in:
| Title: | Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation. |
|---|---|
| Authors: | Radtke, C.1, Enriquez, H.1, Arnault, J. C.1,2, Soukiassian, P.1, Moras, P.3, Crotti, C.3, Perfetti, P.3 |
| Source: | Applied Physics Letters. 11/7/2005, Vol. 87 Issue 19, p193110. 3p. 4 Graphs. |
| Database: | Academic Search Ultimate |
| ISSN: | 00036951 |
|---|---|
| DOI: | 10.1063/1.2130714 |
