View in EDS

Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation.

Saved in:
Bibliographic Details
Title: Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation.
Authors: Radtke, C.1, Enriquez, H.1, Arnault, J. C.1,2, Soukiassian, P.1, Moras, P.3, Crotti, C.3, Perfetti, P.3
Source: Applied Physics Letters. 11/7/2005, Vol. 87 Issue 19, p193110. 3p. 4 Graphs.
Database: Academic Search Ultimate
FullText Text:
  Availability: 0
Header DbId: asn
DbLabel: Academic Search Ultimate
An: 19106000
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Radtke%2C+C%2E%22">Radtke, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Enriquez%2C+H%2E%22">Enriquez, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Arnault%2C+J%2E+C%2E%22">Arnault, J. C.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Soukiassian%2C+P%2E%22">Soukiassian, P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Moras%2C+P%2E%22">Moras, P.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Crotti%2C+C%2E%22">Crotti, C.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Perfetti%2C+P%2E%22">Perfetti, P.</searchLink><relatesTo>3</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>. 11/7/2005, Vol. 87 Issue 19, p193110. 3p. 4 Graphs.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=19106000
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.2130714
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 3
        StartPage: 193110
    Titles:
      – TitleFull: Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Radtke, C.
      – PersonEntity:
          Name:
            NameFull: Enriquez, H.
      – PersonEntity:
          Name:
            NameFull: Arnault, J. C.
      – PersonEntity:
          Name:
            NameFull: Soukiassian, P.
      – PersonEntity:
          Name:
            NameFull: Moras, P.
      – PersonEntity:
          Name:
            NameFull: Crotti, C.
      – PersonEntity:
          Name:
            NameFull: Perfetti, P.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 07
              M: 11
              Text: 11/7/2005
              Type: published
              Y: 2005
          Identifiers:
            – Type: issn-print
              Value: 00036951
          Numbering:
            – Type: volume
              Value: 87
            – Type: issue
              Value: 19
          Titles:
            – TitleFull: Applied Physics Letters
              Type: main
ResultId 1