Analytical potential model of raised source drain double gate junctionless field effect transistors.

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Bibliographic Details
Title: Analytical potential model of raised source drain double gate junctionless field effect transistors.
Authors: Swargiary, Rikhit1 ph22ie1001@cit.ac.in, Sarma, Kaushik Chandra Deva1
Source: International Journal of Nanoelectronics & Materials. Jan2026, Vol. 19 Issue 1, p17-25. 9p.
Database: Academic Search Ultimate
Description
ISSN:19855761