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Analytical potential model of raised source drain double gate junctionless field effect transistors.

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Title: Analytical potential model of raised source drain double gate junctionless field effect transistors.
Authors: Swargiary, Rikhit1 ph22ie1001@cit.ac.in, Sarma, Kaushik Chandra Deva1
Source: International Journal of Nanoelectronics & Materials. Jan2026, Vol. 19 Issue 1, p17-25. 9p.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
An: 191757244
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  Data: Analytical potential model of raised source drain double gate junctionless field effect transistors.
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  Data: <searchLink fieldCode="AR" term="%22Swargiary%2C+Rikhit%22">Swargiary, Rikhit</searchLink><relatesTo>1</relatesTo><i> ph22ie1001@cit.ac.in</i><br /><searchLink fieldCode="AR" term="%22Sarma%2C+Kaushik+Chandra+Deva%22">Sarma, Kaushik Chandra Deva</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Nanoelectronics+%26+Materials%22">International Journal of Nanoelectronics & Materials</searchLink>. Jan2026, Vol. 19 Issue 1, p17-25. 9p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=191757244
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 17
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      – TitleFull: Analytical potential model of raised source drain double gate junctionless field effect transistors.
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            NameFull: Swargiary, Rikhit
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              Text: Jan2026
              Type: published
              Y: 2026
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