APA (7th ed.) Citation

Chen, H., Lee, H., Lee, H., Wu, Y., & Lee, C. (2026). Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. Materials (1996-1944), 19(6), 1209. https://doi.org/10.3390/ma19061209

Chicago Style (17th ed.) Citation

Chen, Hong-You, Hsin-Ying Lee, Hao Lee, Yuh-Renn Wu, and Ching-Ting Lee. "Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels." Materials (1996-1944) 19, no. 6 (2026): 1209. https://doi.org/10.3390/ma19061209.

MLA (9th ed.) Citation

Chen, Hong-You, et al. "Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels." Materials (1996-1944), vol. 19, no. 6, 2026, p. 1209, https://doi.org/10.3390/ma19061209.