View in EDS HTML Full Text PDF Full Text

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels.

Saved in:
Bibliographic Details
Title: Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels.
Authors: Chen, Hong-You1 (AUTHOR), Lee, Hsin-Ying2 (AUTHOR) imhoward26@gmail.com, Lee, Hao3 (AUTHOR), Wu, Yuh-Renn3,4 (AUTHOR), Lee, Ching-Ting1,2,4 (AUTHOR)
Source: Materials (1996-1944). Mar2026, Vol. 19 Issue 6, p1209. 11p.
Database: Academic Search Ultimate
Full text is not displayed to guests.
Description
ISSN:19961944
DOI:10.3390/ma19061209