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In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications.

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Title: In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications.
Authors: Yang, Zhen1 (AUTHOR), Yang, Yuxiang1 (AUTHOR), Wang, Baiqian2 (AUTHOR), Tao, Yaoyu3 (AUTHOR), Pan, Zelun1 (AUTHOR), Cai, Lei1 (AUTHOR), Zhang, Teng1 (AUTHOR), Yan, Longhao1 (AUTHOR), Li, Xianbin2 (AUTHOR) lixianbin@jlu.edu.cn, Yang, Yuchao1,3,4,5 (AUTHOR) yuchaoyang@pku.edu.cn
Source: Advanced Science. 3/27/2026, Vol. 13 Issue 18, p1-20. 20p.
Database: Academic Search Ultimate
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ISSN:21983844
DOI:10.1002/advs.202521815