APA (7th ed.) Citation

Jeong, H., Yoo, S. M., Choe, M., Baek, I., & Jeon, W. (2025). Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control. Scientific Reports, 15(1), 1. https://doi.org/10.1038/s41598-025-25938-w

Chicago Style (17th ed.) Citation

Jeong, Hanseok, Soo Min Yoo, Minki Choe, In-Hwan Baek, and Woojin Jeon. "Optimizing the Crystallinity of ZrO2 Gate Insulator in Indium Gallium Zinc Oxide Thin-film Transistors Through Atomic Layer Deposition Process Temperature Control." Scientific Reports 15, no. 1 (2025): 1. https://doi.org/10.1038/s41598-025-25938-w.

MLA (9th ed.) Citation

Jeong, Hanseok, et al. "Optimizing the Crystallinity of ZrO2 Gate Insulator in Indium Gallium Zinc Oxide Thin-film Transistors Through Atomic Layer Deposition Process Temperature Control." Scientific Reports, vol. 15, no. 1, 2025, p. 1, https://doi.org/10.1038/s41598-025-25938-w.