Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control.
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| Title: | Optimizing the crystallinity of ZrO |
|---|---|
| Authors: | Jeong, Hanseok1 (AUTHOR), Yoo, Soo Min1 (AUTHOR), Choe, Minki2 (AUTHOR), Baek, In-Hwan2 (AUTHOR) baek@inha.ac.kr, Jeon, Woojin1 (AUTHOR) woojin.jeon@khu.ac.kr |
| Source: | Scientific Reports. 11/25/2025, Vol. 15 Issue 1, p1-9. 9p. |
| Database: | Academic Search Ultimate |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: asn DbLabel: Academic Search Ultimate An: 192686212 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Optimizing the crystallinity of ZrO<subscript>2</subscript> gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Jeong%2C+Hanseok%22">Jeong, Hanseok</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yoo%2C+Soo+Min%22">Yoo, Soo Min</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Choe%2C+Minki%22">Choe, Minki</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Baek%2C+In-Hwan%22">Baek, In-Hwan</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> baek@inha.ac.kr</i><br /><searchLink fieldCode="AR" term="%22Jeon%2C+Woojin%22">Jeon, Woojin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> woojin.jeon@khu.ac.kr</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Scientific+Reports%22">Scientific Reports</searchLink>. 11/25/2025, Vol. 15 Issue 1, p1-9. 9p. |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=192686212 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1038/s41598-025-25938-w Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 1 Titles: – TitleFull: Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Jeong, Hanseok – PersonEntity: Name: NameFull: Yoo, Soo Min – PersonEntity: Name: NameFull: Choe, Minki – PersonEntity: Name: NameFull: Baek, In-Hwan – PersonEntity: Name: NameFull: Jeon, Woojin IsPartOfRelationships: – BibEntity: Dates: – D: 25 M: 11 Text: 11/25/2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 20452322 Numbering: – Type: volume Value: 15 – Type: issue Value: 1 Titles: – TitleFull: Scientific Reports Type: main |
| ResultId | 1 |