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Experimentally feasible Na3Bi monolayer: Floquet quantum anomalous Hall effect with a high Chern number.

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Title: Experimentally feasible Na3Bi monolayer: Floquet quantum anomalous Hall effect with a high Chern number.
Authors: Zhang, Zequn1 (AUTHOR), Xie, Xiaohan1 (AUTHOR), Huang, Baibiao1 (AUTHOR), Dai, Ying1 (AUTHOR) daiy60@sdu.edu.cn, Niu, Chengwang1 (AUTHOR) c.niu@sdu.edu.cn
Source: APL Electronic Devices. Mar2026, Vol. 2 Issue 1, p1-6. 6p.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 192689802
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Experimentally feasible Na<subscript>3</subscript>Bi monolayer: Floquet quantum anomalous Hall effect with a high Chern number.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Zhang%2C+Zequn%22">Zhang, Zequn</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xie%2C+Xiaohan%22">Xie, Xiaohan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Huang%2C+Baibiao%22">Huang, Baibiao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dai%2C+Ying%22">Dai, Ying</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> daiy60@sdu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Niu%2C+Chengwang%22">Niu, Chengwang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> c.niu@sdu.edu.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22APL+Electronic+Devices%22">APL Electronic Devices</searchLink>. Mar2026, Vol. 2 Issue 1, p1-6. 6p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=192689802
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/5.0310913
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 1
    Titles:
      – TitleFull: Experimentally feasible Na3Bi monolayer: Floquet quantum anomalous Hall effect with a high Chern number.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Zhang, Zequn
      – PersonEntity:
          Name:
            NameFull: Xie, Xiaohan
      – PersonEntity:
          Name:
            NameFull: Huang, Baibiao
      – PersonEntity:
          Name:
            NameFull: Dai, Ying
      – PersonEntity:
          Name:
            NameFull: Niu, Chengwang
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 29958423
          Numbering:
            – Type: volume
              Value: 2
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: APL Electronic Devices
              Type: main
ResultId 1