APA (7th ed.) Citation

Chiashi, Y., Kato, K., Iba, Y., Oka, H., Iizuka, S., Asai, H., . . . Mori, T. (2026). An electric characterization method for identifying the number and position of unintended defect dots formed in silicon quantum dot devices. APL Electronic Devices, 2(1), 1. https://doi.org/10.1063/5.0312498

Chicago Style (17th ed.) Citation

Chiashi, Yusuke, Kimihiko Kato, Yoshihisa Iba, Hiroshi Oka, Shota Iizuka, Hidehiro Asai, Minoru Ogura, Takumi Inaba, and Takahiro Mori. "An Electric Characterization Method for Identifying the Number and Position of Unintended Defect Dots Formed in Silicon Quantum Dot Devices." APL Electronic Devices 2, no. 1 (2026): 1. https://doi.org/10.1063/5.0312498.

MLA (9th ed.) Citation

Chiashi, Yusuke, et al. "An Electric Characterization Method for Identifying the Number and Position of Unintended Defect Dots Formed in Silicon Quantum Dot Devices." APL Electronic Devices, vol. 2, no. 1, 2026, p. 1, https://doi.org/10.1063/5.0312498.