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Gate-tunable near-field localization switching in black phosphorus via hybrid plasmonic excitation.

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Title: Gate-tunable near-field localization switching in black phosphorus via hybrid plasmonic excitation.
Authors: Ramezanpour, S.1 (AUTHOR) shahab.ramezanpour@utoronto.ca, Helmy, A. S.1 (AUTHOR)
Source: APL Electronic Devices. Mar2026, Vol. 2 Issue 1, p1-8. 8p.
Database: Academic Search Ultimate
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  Data: Gate-tunable near-field localization switching in black phosphorus via hybrid plasmonic excitation.
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  Data: <searchLink fieldCode="JN" term="%22APL+Electronic+Devices%22">APL Electronic Devices</searchLink>. Mar2026, Vol. 2 Issue 1, p1-8. 8p.
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        Value: 10.1063/5.0319590
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        Text: English
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              Text: Mar2026
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