APA (7th ed.) Citation

Zhang, H., Zeng, M., Chen, J., Wang, L., Jiang, S., Cao, Q., . . . Hao, L. (2026). Water‐Assisted Exfoliation of HfO2‐Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors. Advanced Science, 13(19), 1. https://doi.org/10.1002/advs.202523654

Chicago Style (17th ed.) Citation

Zhang, Han, et al. "Water‐Assisted Exfoliation of HfO2‐Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors." Advanced Science 13, no. 19 (2026): 1. https://doi.org/10.1002/advs.202523654.

MLA (9th ed.) Citation

Zhang, Han, et al. "Water‐Assisted Exfoliation of HfO2‐Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors." Advanced Science, vol. 13, no. 19, 2026, p. 1, https://doi.org/10.1002/advs.202523654.