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Capacitive Amplification toward Boltzmann‐Limit Switching in WSe2 Reconfigurable Field‐Effect Transistors.

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Title: Capacitive Amplification toward Boltzmann‐Limit Switching in WSe2 Reconfigurable Field‐Effect Transistors.
Authors: Yi, Jiali1 (AUTHOR), Shuai, Qin1 (AUTHOR), Wu, Guangcheng1 (AUTHOR), Wu, Haifeng1 (AUTHOR), Zhu, Chenguang1 (AUTHOR), Sun, Xingxia1 (AUTHOR), Zong, Qijun1 (AUTHOR) qijunzong@hnu.edu.cn, Liao, Yihan1 (AUTHOR), Zhu, Xiaoli1 (AUTHOR), Fan, Xiulian2 (AUTHOR), Zhang, Zhengwei2 (AUTHOR), Zhou, Yu2 (AUTHOR), Wang, Xiao1 (AUTHOR), Li, Dong1 (AUTHOR) liidong@hnu.edu.cn, Pan, Anlian1,3 (AUTHOR) anlian.pan@hnu.edu.cn
Source: Advanced Functional Materials. 4/2/2026, Vol. 36 Issue 27, p1-7. 7p.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
An: 192765878
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Capacitive Amplification toward Boltzmann‐Limit Switching in WSe<subscript>2</subscript> Reconfigurable Field‐Effect Transistors.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Functional+Materials%22">Advanced Functional Materials</searchLink>. 4/2/2026, Vol. 36 Issue 27, p1-7. 7p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=192765878
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        Value: 10.1002/adfm.202524990
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      – Code: eng
        Text: English
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              Text: 4/2/2026
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